Texas-instruments Digital Signal Processor SM320F2812-HT Bedienungsanleitung PDF herunterladen (Seite 146)

SM320F2812-HT

SGUS062B–JUNE 2009 – REVISED JUNE 2011

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6.31 Flash Timing

6.31.1 Recommended Operating Conditions

Table 6-62. Flash Endurance Timing

(1)(2)

ERASE/PROGRAM

MIN NOM MAX UNIT

TEMPERATURE

Flash endurance for the array (write/erase cycles) -40°C to 125°C (ambient) 20000

(3)

50000

(3)

cycles

OTP

OTP endurance for the array (write cycles) -40°C to 125°C (ambient) 1 write

(1) Write/erase operations outside of the temperature ranges indicated are not specified and may affect the endurance numbers.

(2) Flash Timing Endurance is the minimum number of write/erase or write cycles specified over a programming temperature range of -40°C

to 125°C. Flash reads are supported within the recommended operating conditions specified in section 6.2.

(3) The write/erase cycle numbers of 20000 (MIN) and 50000 (TYP) are applicable only for silicon revision G. For older silicon revisions, the

write/erase cycle numbers of 100 (MIN) and 1000 (TYP) are applicable.

Table 6-63. Flash Parameters at 150-MHz SYSCLKOUT

(1) (2)

PARAMETER MIN TYP MAX UNIT

16-Bit Word 35 μs

Program

8K Sector 170 ms

Time

16K Sector 320 ms

8K Sector 10 s

Erase Time

16K Sector 11 s

Erase 75 mA

DD3VFLP

DD3VFL

current consumption during the Erase/Program cycle

Program 35 mA

DDP

current consumption during Erase/Program cycle 140 mA

DDIOP

DDIO

current consumption during Erase/Program cycle 20 mA

(1) Typical parameters as seen at room temperature using flash API V1 including function call overhead.

(2) Not production tested.

Table 6-64. Flash/OTP Access Timing

(1) (2)

PARAMETER MIN TYP MAX UNIT

a(fp)

Paged Flash access time 36 ns

a(fr)

Random Flash access time 36 ns

a(OTP)

OTP access time 60 ns

(1) For 150 MHz, PAGE WS = 5 and RANDOM WS = 5

For 135 MHz, PAGE WS = 4 and RANDOM WS = 4

(2) Not production tested.

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